laser diode specifications customer : model : QL67F6S-A/b/c signature of approval approved by checked by issued by approval by customer
? overview QL67F6S-A/b/c is a mocvd grown 670 nm band gain-guided type ingaalp laser diode with quantum well structure. it's an attractive light source, with a typical light output power of 10 mw for opto-electronic devices such as bar code reader. ? application ?? optical leveler ?? laser module ?? bar code reader ? features ?? visible light output : p = 670 nm ?? optical power output : 10 mw cw ?? package type : to-18 (5.6mm ) ?? built-in photo diode for monitoring laser output ? electrical connection a ld cathode, pd anode (fig. 1) b ld , pd anode (fig. 2) c ld anode, pd cathode (fig. 3) bottom view pin configuration fig. 2 ql67f6sb fig. 1 ql67f6sa fig. 3 ql67f6sc
? absolute maximum rating at tc=25 ? items symbols values unit optical output power p 12 mw laser diode reverse voltage v 2 v photo diode reverse voltage v 30 v operating temperature topr -10 ?- +60 c storage temperature tstg -40 ?- +85 c ? electrical and optical characteristics at tc=25 ? items symbols min. typ. max. unit condition optical output power po - 10 - mw - threshold current ith - 40 60 ma - operating current iop - 50 70 ma po=10mw operating voltage vop - 2.3 2.6 v po=10mw lasing wavelength p 660 670 680 nm po=10mw ii 8 11 15 deg po=10mw beam divergence 24 32 35 deg po=10mw ? ii - - ?? 1.5 deg po=10mw beam angle ? - - ?? 2.5 deg po=10mw monitor current im 0.3 0.6 0.9 ma po=10mw astigmatism as 30 m optical distance ? x, ? y, ? z - - ?? 60 m notice : QL67F6S-A/b/c to be operated on apc circuit the above product specification are s ubject to change without notice .
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